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Basic Research Laboratory, Electronics and Telecommunications Research Institute (ETRI) | 論文
- Etching Characteristics of Ge_2Sb_2Te_5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
- Significance of Gate Oxide Thinning below 1.5nm on 1/f Noise Behavior in n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors under Electrical Stress
- Crystallographic Orientations and Electrical Properties of Bi_La_Ti_3O_ Thin Film on Pt/Ti/SiO_2/Si and Pt/SiO_2/Si Substrates
- Significance of Gate Oxide Thinning below 1.5 nm on $1/ f$ Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
- Crystallographic Orientations and Electrical Properties of Bi3.47La0.85Ti3O12 Thin Films on Pt/Ti/SiO2/Si and Pt/SiO2/Si Substrates