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Association Of Super-advanced Electronics Technologies (aset):(present Address)device Development Di | 論文
- Plasma-Wall Interactions in Dual Frequency Narrow-Gap Reactive Ion Etching System
- Drastic Change in CF_2 and CF_3 Kinetics Induced by Hydrogen Addition into CF_4 Etching Plasma
- Spatial Distribution and Surface Loss of CF_3 and CF_2 Radicals in a CF_4 Etching Plasma
- Realistic Etch Yield of Fluorocarbon ions in SiO_2 Etch Process
- Radical Kinetics in a Fluorocarbon Etching Plasma