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Advanced Research Center, Hitachi Cable Ltd. | 論文
- Realization of Low Dislocation GaN/Sapphire Wafers by 3-Step Metalorganic Vapor Phase Epitaxial Growth with Island Induced Dislocation Control
- Mechanism of Carrier Accumulation at the Hetero Interface between InSb and GaAs
- InGaxAs1-x/GaAs量子井戸構造のエリプソメトリ-解析〔英文〕 (電子材料技術の新展開)