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Advanced Industrial Sci. And Technol. Ibaraki Jpn | 論文
- Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation
- Study on Surface Polarity of GaN by Density Functional Theory and Molecular Dynamics
- Room Temperature Coulomb Oscillation for Single Electron Transistor on Atomically Flat Ti/α-Al_2O_3 Substrate Made by Pulse-Mode AFM Nano-Oxidation Process
- Planarization of Film Deposition and Improvement of Channel Structure for Fabrication of Anti-Resonant Reflecting Optical Waveguide Type X-crossing Vertical Coupler Filter
- Sidelobe Suppression of Vertical Coupler Filter with an X-Crossing Configuration
- Single Electron Transistor on Atomically Flat α-Al_2O_3 Substrate Made by AFM Nano-Oxidation Process
- High-Density Recording Mechanism of Magnetooptieal Disks
- Investigation of low-energy tilted ion implantation for fin-type double-gate metal-oxide-semiconductor field-effect transistor extension doping (Special issue: Solid state devices and materials)
- Dual-metal-gate transistors with symmetrical threshold voltages using work-function-tuned Ta/Mo bilayer metal gates (Special issue: Solid state devices and materials)
- Ta/Mo stack dual metal gate technology applicable to gate-first processes (Special issue: Solid state devices and materials)
- Stereocontrolled Synthesis of (+)-Acuminolide and Determination of Its Absolute Configuration