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Advanced Device Development Department Renesas Technology Corporation | 論文
- W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory
- Defects in SiO_2 /Si Structures Probed by Using a Monoenergetic Positron Beam
- W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory