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A.F.Ioffe Physical-Technical Institute | 論文
- Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
- High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
- Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
- InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
- InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
- Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
- Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
- Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
- Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots
- Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper
- 26p-YC-11 ENERGY SPECTRA OF VIBRONIC EXCITATIONS IN SEMICONDUCTOR NANOCRYSTALS
- Recovery of Laser-Diode Coherence Length by a Photorefractive Double Phase-Conjugate Mirror