NOTOMI M. | NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation
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NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation | 論文
- Half-Integer Quantum Hall Effect in Gate-Controlled Epitaxial Graphene Devices
- Quantum Hall Effect and Carrier Scattering in Quasi-Free-Standing Monolayer Graphene
- Electric-Field-Controllable Spin Interferometer Based on the Rashba Spin-Orbit Interaction
- RF Equivalent-Circuit Analysis of p-Type Diamond Field-Effect Transistors with Hydrogen Surface Termination
- Effect of Si/SiO_2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO_2