Otsuji Taiichi | Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan
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- Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japanの論文著者
Research Institute of Electrical Communication (RIEC), Tohoku University, Sendai 980-8577, Japan | 論文
- Interdiffusion of Si and Ge Atoms during Gas-Source MBE of Ge on Si(100) at 500-800℃
- Behavior of Excess Arsenic in Undoped, Semi-Insulating GaAs during Ingot Annealing
- Low-Temperature Deposition of Silicon Dioxide Films by Photoinduced Decomposition of Tetraethoxysilane
- Effects of Refraction of X-Rays in Double-Crystal Topography : Techniques, Instrumentations and Measurement
- EPR Study on Cr^ Distribution in LEC GaAs: Cr Wafers