SOCHACKI Tomasz | Institute of High Pressure Physics PAS
スポンサーリンク
概要
Institute of High Pressure Physics PAS | 論文
- Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning
- AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)