SAITO Yoshiaki | Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation
スポンサーリンク
概要
- SAITO Yoshiakiの詳細を見る
- 同名の論文著者
- Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporationの論文著者
Advanced LSI Technology Laboratory, Corporate Research and Development Center, Toshiba Corporation | 論文
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
- Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
- Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
- Dielectric Constant Behavior of Hf-O-N System