WENG Min-Hung | Department of Electrical Engineering, National Cheng-Kung University
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概要
Department of Electrical Engineering, National Cheng-Kung University | 論文
- Regenerative Switching Phenomenon of a GaAs Metal-n-δ(p^+)-n-n^+ Structure
- Emitter Edge-Thinning Effect on InGaAs/InP Double-Heterostructure-Emitter Bipolar Transistor
- Mobility Enhancement in Highly Strained δ-Doped InP/InGaAs/InP Heterostructure with InGaP Cap Layer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- High-Temperature Breakdown Characteristics of δ-Doped In_Ga_P/GaAs/In_Ga_As/AlGaAs High Electron Mobility Transistor
- An Improved In_Ga_P/GaAs Double Heterostructure-Emitter Bipolar Transistor Using Emitter Edge-Thinning Technique