AKIYAMA Hidefumi | Research Center for Advanced Science and Technology (RCAST), The University of Tokyo
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概要
Research Center for Advanced Science and Technology (RCAST), The University of Tokyo | 論文
- P-Type Enhancement-Mode SiGe Doped-Channel Field-Effect Transistor
- A Novel Triple δ-Doped SiGe Heterostructure Field-Effect Transistor
- Fabrication of Periodically Domain-Inverted AlGaAs Quasi-Phase-Matched Devices by GaAs/Ge/GaAs Sublattice Reversal Epitaxy
- Sublattice Reversal in GaAs/Si/GaAs (100) Heterostructures by Molecular Beam Epitaxy
- Strain Effects of Ge Islands on Si_Ge_x/Si Quantum Well