Hashizume Tamotsu | Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan
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- Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japanの論文著者
Research Center for Integrated Quantum Electronics, and Graduate School of Information Science and Technology, Hokkaido University, N-13, W-8, Kita-ku, Sapporo 060-8628, Japan | 論文
- Fundamental Study of InP-Based Open-Gate Field-Effect Transistors for Application to Liquid-Phase Chemical Sensors
- Formation and application of InP porous structures on p-n substrates
- Formation and application of InP porous structures on p-n substrates
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)
- Electrochemical formation and functionalization of InP porous nanostructures and their application to chemical sensors(Session8B: High-Frequency, Photonic and Sensing Devices)