Yoo Jong-Ryeol | Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea

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概要

関連著者

Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Kim Chul-sung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Ku Ja-hum
Advanced Process Development Project System Lsi Division Samsung Electronics Co. Ltd.
Yoo Jong-ryeol
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Lee Deok-hyung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Lee Byeong-chan
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Choi Siyoung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
Moon Joo-Tae
Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea
Lee Byeong-Chan
Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea
Kim Chul-Sung
Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea
Ku Ja-Hum
Advanced Process Development Project, System LSI Division, Samsung Electronics Co. Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea
Yoo Jong-Ryeol
Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea
Lee Deok-Hyung
Process Development Team, Memory Division, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyunggi-Do 449-711, Korea

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著作論文

Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques

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