Yokogawa Toshiya | Device Module Development Center, Corporate R&D Division, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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概要
- Yokogawa Toshiyaの詳細を見る
- 同名の論文著者
- Device Module Development Center, Corporate R&D Division, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japanの論文著者
関連著者
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Yokogawa Toshiya
Device Module Development Center, Corporate R&D Division, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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大屋 満明
東大理
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Nowak Roman
Nordic Hysitron Laboratory, Department of Materials Science, School of Chemical Technology, Aalto University, FI-00076 Aalto, Finland
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Fujikane Masaki
Device Module Development Center, Corporate R&D Division, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Yokogawa Toshiya
Device Module Development Center, Corporate R&D Division, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Nagao Shijo
NTNU Nanomechanical Laboratory, Department of Structural Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
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Fujikane Masaki
Device Module Development Center, Corporate R&D Division, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Yokogawa Toshiya
Device Module Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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Oya Mitsuaki
Device Module Development Center, Panasonic Corporation, Moriguchi, Osaka 570-8501, Japan
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大屋 満明
パナソニック（株） デバイス社 基盤技術開発センター
著作論文
- Low Contact Resistance P-Type Electrode for Nonpolar m-Plane GaN
- Strain Rate Controlled Nanoindentation Examination and Incipient Plasticity in Bulk GaN Crystal