Kang Ho-Kyu | Advanced Process & Development TEAM, System LSI Division & 3Technology & Development TEAM, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea

スポンサーリンク

概要

関連著者

Lee Jong-ho
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
Lee Nae-in
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
Cho Hoon
Department Of Physics Dongguk University
Jeon In
School Of Materials Science & Engineering Seoul National University
Hwang Cheol
School Of Mat. Sci. And Eng. Seoul National Univ
Kang Ho-kyu
Advanced Process & Development Team System Lsi Division & 3technology & Development Team
EOM Dail
School of Materials Science & Engineering, Seoul National University
Park Jaehoo
School Of Material Science And Engineering Seoul National University
Kim Hyeong
School Of Electrical And Electronics Engineering Chung-ang University
Park Chan
Department Of Anatomy College Of Medicine Kyung Hee University
Cho Hoon
Department of Physics, Dongguk University, Seoul 100-715, Korea
Jeon In
School of Materials Science & Engineering, Seoul National University, San 56-1, Seoul, Korea
Hwang Cheol
School of Materials Science & Engineering, Seoul National University, San 56-1, Seoul, Korea
Park Chan
Department of Physics, Dongguk University, Seoul 100-715, Korea
Kim Hyeong
School of Materials Science & Engineering, Seoul National University, San 56-1, Seoul, Korea
Kang Ho-Kyu
Advanced Process & Development TEAM, System LSI Division & 3Technology & Development TEAM, Samsung Electronics Co., Ltd., San#24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, Korea
Eom Dail
School of Materials Science & Engineering, Seoul National University, San 56-1, Seoul, Korea
Park Jaehoo
School of Materials Science & Engineering, Seoul National University, San 56-1, Seoul, Korea

もっと見る

著作論文

Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor

スポンサーリンク