REDONDO Estefania | Departamento de Fisica Aplicada III(Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense
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概要
- 同名の論文著者
- Departamento de Fisica Aplicada III(Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutenseの論文著者
Departamento de Fisica Aplicada III(Electricidad y Electronica), Facultad de Ciencias Fisicas, Universidad Complutense | 論文
- Electrical Characterization of Al/SiN_x:H/n and p-In_Ga_As Structures by Deep-Level Transient Spectroscopy and Conductance Transient Techniques
- Electrical Characterization of Low Nitrogen Content Plasma Deposited and Rapid Thermal Annealed Al/SiN_x : H/InP Metal-Insulator-Semiconductor Structures
- Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Fil
- Sub-Bandgap External Quantum Efficiency in Ti Implanted Si Heterojunction with Intrinsic Thin Layer Cells