Matsubara Koji | National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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- National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japanの論文著者
National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan | 論文
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
- Highly Stacked and High-Quality Quantum Dots Fabricated by Intermittent Deposition of InGaAs
- 1.3 μm Distributed Feedback Laser with Half-Etching Mesa and High-Density Quantum Dots
- Self-Aligned Planar Double-Gate Field-Effect Transistors Fabricated by a Source/Drain First Process