Nishi Yoshifumi | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan
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- Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japanの論文著者
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, Yokohama 235-8522, Japan | 論文
- Re-Examination of Performance and Reliability Degradation in Metal--Oxide--Nitride--Oxide--Semiconductor Memory with Ultrathin SiN Charge Trap Layers
- Enhanced Degradation by Negative Bias Temperature Stress in Si Nanowire Transistor
- Direct Measurement of Back-Tunneling Current during Program/Erase Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories and Its Dependence on Gate Work Function
- A New Method to Extract the Charge Centroid in the Program Operation of Metal–Oxide–Nitride–Oxide–Semiconductor Memories
- Nanowire-Width and Dopant-Species Dependences of Carrier Transport Characteristics of Schottky Barrier Source/Drain Nanowire Field-Effect Transistors (Special Issue : Solid State Devices and Materials (2))