Fukami Shunsuke | Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan
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- 同名の論文著者
- Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japanの論文著者
Center for Spintronics Integrated Systems, Tohoku University, Sendai 980-8577, Japan | 論文
- Design of a Nine-Transistor/Two-Magnetic-Tunnel-Junction-Cell-Based Low-Energy Nonvolatile Ternary Content-Addressable Memory
- Time-Resolved Switching Characteristic in Magnetic Tunnel Junction with Spin Transfer Torque Write Scheme
- High-Density and Low-Power Nonvolatile Static Random Access Memory Using Spin-Transfer-Torque Magnetic Tunnel Junction
- Fabrication of a Magnetic Tunnel Junction-Based 240-Tile Nonvolatile Field-Programmable Gate Array Chip Skipping Wasted Write Operations for Greedy Power-Reduced Logic Applications
- Pd Layer Thickness Dependence of Tunnel Magnetoresistance Properties in CoFeB/MgO-Based Magnetic Tunnel Junctions with Perpendicular Anisotropy CoFe/Pd Multilayers