MATSUOKA Toshimasa | Central Research Laboratories, Sharp Corporation
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概要
Central Research Laboratories, Sharp Corporation | 論文
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- MOCVD Growth of InP on 4-inch Si Substrate with GaAs Intermediate Layer
- Seeded Electron Beam Recrystallization of Large Area SOI Using Striped Tungsten Encapsulation Technique