Kanoh Hiroyuki | Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan
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- Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japanの論文著者
Graduate School of Science and Engineering Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8552, Japan | 論文
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Fabrication of InP/InGaAs DHBTs with buried SiO_2 wires(Session 2B : Graphene and III-Vs)
- Double-Slit Interference Observation of Hot Electrons in Semiconductors : Analysis of Experimental Data
- Numerical Foundation of Hot-Electron Diffraction Experiment Based on Ballistic Electron Emission Microscope
- Charging Time of Double-Layer Emitter in Heterojunction Bipolar Transistor Based on Transmission Formalism