Katayama Yoshifumi | Central Research Laboratory,Hitachi Ltd.
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概要
Central Research Laboratory,Hitachi Ltd. | 論文
- Landau-Level Broadening in GaAs/AlGaAs Heterojunctions
- A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET) : B-3: NOVEL DEVICES
- Resistivity Anomalies in Pb_Ge_xTe at Low Temperatures
- Electrical Properties and Energy Spectrum of In-Doped Pb_Ge_xTe
- A BiCMOS Circuit Using a Base-Boost Technique for Low-Voltage, Low-Power Application (Special Issue on Low-Power LSI Technologies)