Byun Hyun-geun | Memory Division, Samsung Electronics Co.
スポンサーリンク
概要
Memory Division, Samsung Electronics Co. | 論文
- 3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- 3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
- Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell Structure
- Improved write methods for 64Mb Phase-change Random Access Memory(PRAM) (ISSCC特集3 不揮発性メモリ)
- Improved write methods for 64Mb Phase-change Random Access Memory (PRAM)