Yu Min | Institute of Microelectronics, Peking University, Beijing 100871, China
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概要
Institute of Microelectronics, Peking University, Beijing 100871, China | 論文
- Performance Improvement of Capacitorless Dynamic Random Access Memory Cell with Band-Gap Engineered Source and Drain
- Hydrogen Annealing Induced the Enhancement of Ferromagnetism in Cr-Doped TiO2 Anatase Films
- Unified Reaction--Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
- Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation