Nakagawa Satoshi | Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan
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- Nakagawa Satoshiの詳細を見る
- 同名の論文著者
- Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japanの論文著者
Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan | 論文
- GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
- Pure Blue Laser Diodes Based on Nonpolar $m$-Plane Gallium Nitride with InGaN Waveguiding Layers
- Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates