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Research and Development Headquarters, ROHM Co., Ltd., Kyoto 615-8585, Japan | 論文

• GaN-Based Trench Gate Metal Oxide Semiconductor Field Effect Transistors with Over 100 cm2/(V s) Channel Mobility
• Pure Blue Laser Diodes Based on Nonpolar $m$-Plane Gallium Nitride with InGaN Waveguiding Layers
• Vertical GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistors on GaN Bulk Substrates

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