Ohashi Kazuma | Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan
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- Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japanの論文著者
Integrated Research Institute, Tokyo Institute of Technology, 4259-R2-17 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan | 論文
- Design of On-Chip High Speed Interconnect on Complementary Metal Oxide Semiconductor 180 nm Technology
- RF Signal Generator Based on Time-to-Analog Converter in 0.18 μm Complementary Metal Oxide Semiconductor
- Wide-band, high linear low noise amplifier design in 0.18um CMOS technology
- Radio Frequency Micro Electro Mechanical Systems Inductor Configurations for Achieving Large Inductance Variations and High $Q$-factors
- Physical design challenges to nano-CMOS circuits