Tosaka Yasuhiro | Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan
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- Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japanの論文著者
Transmission Devices R&D Laboratories, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan | 論文
- Relationship between Reverse-Biased Electrostatic-Discharge Tolerance and Aging of GaInAsP/InP Buried-Heterostructure Laser Diodes
- Failure Analysis of InP-Based Edge-Emitting Buried Heterostructure Laser Diodes Degraded by Forward-Biased Electrostatic Discharge Tests
- Facet Passivation of GaInAsP/InP Edge-Emitting Laser Diode by Aluminum Ultrathin Layer Insertion
- Electrostatic-Discharge-Induced Degradation Caused by Argon Ion Bombardment in Facet-Coating Process of GaInAsP/InP Laser Diode
- Analysis of Reverse-Biased Electrostatic-Discharge-Induced Degradation of GaInAsP/InP Buried Heterostructure Laser Diode