Egawa Takashi | Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
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- 同名の論文著者
- Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japanの論文著者
Research Center for Nano-Device and System, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan | 論文
- Barrier-Height-Enhanced $n$-GaN Schottky Photodiodes Using a Thin $p$-GaN Surface Layer
- Novel Quaternary AlInGaN/GaN Heterostructure Field Effect Transistors on Sapphire Substrate
- DC Characteristics in High-Quality AlGaN/AlN/GaN High-Electron-Mobility Transistors Grown on AlN/Sapphire Templates
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Grown on Epitaxial AlN/Sapphire Templates
- High Performance of GaN-Based Light Emitting Diodes Grown on 4-in. Si(111) Substrate