Hong K. | Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea
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概要
Seoul Branch, Korea Basic Science Institute, Seoul 136-701, Korea | 論文
- Free Carrier Concentration Gradient along the $c$-Axis of a Freestanding Si-doped GaN Single Crystal
- Influence of Intentionally Strained Sapphire Substrate on GaN Epilayers
- Electrical Characterization of InAs/InP Self-Assembled Quantum Dots by Deep-Level Transient Spectroscopy
- 31aSA-10 (π^+, K^+)反応を用いた ^5_∧He ハイパー核の非中間子弱崩壊の実験的研究 (12)
- 31aSA-9 (π^+, K^+)反応を用いた ^5_∧He ハイパー核の非中間子弱崩壊の実験的研究 (11)