SAKIYAMA Keizo | VLSI Development Laboratories, IC Tenri Group, SHARP Corporation

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• SAKIYAMA Keizoの詳細を見る
• 同名の論文著者
• VLSI Development Laboratories, IC Tenri Group, SHARP Corporationの論文著者

VLSI Development Laboratories, IC Tenri Group, SHARP Corporation | 論文

• FN Program Technology of Sector Erasable Flash Memory with Conventional 2-Layer Poly Silicon ETOX Cell Structure
• Drain Disturb Relaxation by Substrate bias Selecting Scheme for Sector Erase Flash Memory with Conventional Single Stacked Gate Cell Structure
• A Flash Memory Technology for Operating Voltage Reduction and Self-Convergence of the Over Erased Cells

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