Hara Takefumi | Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan
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- Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japanの論文著者
Research Institute of Electrical Communication, Tohoku University, Sendai 980-8577, Japan | 論文
- Transmission Electron Microscopy and Raman-Scattering Spectroscopy Observation on the Interface Structure of Graphene Formed on Si Substrates with Various Orientations
- Room Temperature Logic Inverter on Epitaxial Graphene-on-Silicon Device
- Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation
- Temperature-Programmed Desorption Observation of Graphene-on-Silicon Process
- Oxygen-induced reduction of the graphitization temperature of SiC surface (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)