Nakazato Hiroshi | Faculty of Science and Technology,Hirosaki University
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概要
Faculty of Science and Technology,Hirosaki University | 論文
- DLTS Study of Electron Traps in n-GaAs Grown by Gas Source Molecular Beam Epitaxy Using Triethylgallium and AsH_3
- Photoluminescence from Ultrathin InAs/GaAs Single Quantum Wells Grown on GaAs(111)A Substrates
- Indium Reevaporation during Molecular Beam Epitaxial Growth of InGaAs Layers on GaAs Substrates
- Diagnostics of Gas Reaction Using Trimethylgallium-AsH_3 and Triethylgallium-AsH_3 in Low-Pressure Organometallic Vapor Phase Epitaxy
- Doping Enhancement by Excimer Laser Irradiation in Gas Source Molecular Beam Epitaxy of GaAs