Kamiyama Satoshi | Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan
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- Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japanの論文著者
Semiconductor Leading Edge Technologies, Inc., Tsukuba, Ibaraki 305-8569, Japan | 論文
- Impact of High Temperature Annealing on Traps in Physical-Vapor-Deposited-TiN/SiO2/Si Analyzed by Positron Annihilation
- Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography
- Trench Sidewall Elimination Effect on Line-to-Line Leakage Current in Scalable Porous Silica ($k= 2.1$)/Cu Interconnect Structure
- Resolution Enhancement for Beyond-22-nm Node Using Extreme Ultraviolet Exposure Tool
- Flare Impact and Correction for Critical Dimension Control with Full-Field Exposure Tool