SOEZIMA Yosio | Department of Precision Engineering, Faculty of Engineering, Osaka University

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• 同名の論文著者
• Department of Precision Engineering, Faculty of Engineering, Osaka Universityの論文著者

Department of Precision Engineering, Faculty of Engineering, Osaka University | 論文

• Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
• Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
• Oxygen-Related Donors Generated at 800℃ in CZ-Si
• White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
• Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers

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