Fukui T. | Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University

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• 同名の論文著者
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Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University | 論文

• Al2O3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers
• Interface characterization of Al_2O_3/AlGaN structures prepared by atomic layer deposition
• Characterization of GaN surfaces after high-temperature annealing and carbon diffusion(Session9B: GaN and SiC Device Process Technology)
• Future of Heterostructure Microelectronics and Roles of Materials Research for Its Progress(Plenary,Heterostructure Microelectronics with TWHM2005)
• 2-bit Arithmetic Logic Unit Utilizing Hexagonal BDD Architecture for Implementation of Nanoprocessor on GaAs Nanowire Network(Session4B: Emerging Devices II)

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