Toyofuku Masaharu | Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan
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- 同名の論文著者
- Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japanの論文著者
Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan | 論文
- Characteristics of Nucleation Using the Bias-Enhanced Nucleation Method at Low Pressure
- Epitaxy in Fe3Si/FeSi2 Superlattices Prepared by Facing Target Direct-Current Sputtering at Room Tempertaure
- Temperature-Dependent Current-Induced Magnetization Switching in Fe3Si/FeSi2/Fe3Si Trilayered Films
- Current-Induced Magnetization Switching in Fe3Si/FeSi2 Artificial Lattices