Gangil Sandip | Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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概要
- Gangil Sandipの詳細を見る
- 同名の論文著者
- Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japanの論文著者
関連著者
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NAKAMURA Atsushi
Research Institute for Information Science and Education, Hiroshima University
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Gangil Sandip
Graduate School Of Electronic Science And Techonology Shizuoka University
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Gangil Sandip
Graduate School of Electronic Science and Technology, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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中村 純
広島大学情報メディア教育研究センター
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中村 純
広大情報メディア
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Aoki Toru
Research Institute Of Electronics Shizuoka University・graduate School Of Electronic Science And Tech
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Aoki Toru
Research Institute Of Electronics Shizuoka University
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TEMMYO Jiro
Photonic Devices Laboratory, Research Institute of Electronics, Shizuoka University
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Nakamura A
Department Of Applied Physics Fukuoka University
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Nakamura Atsushi
Photonic Devices Laboratory Research Institute Of Electronics Shizuoka University
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Gangil Sandip
Graduate School of Electronic Science and Techonology, Shizuoka University
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Temmyo Jiro
Research Institute of Electronics, Shizuoka University・Graduate School of Electronic Science and Tec
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TEMMYO Jiro
Graduate School of Electronic Science and Technology, Shizuoka University
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Temmyo Jiro
Photonic Devices Laboratory Research Institute Of Electronics Shizuoka University
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Shimomura Masaru
Research Institute of Electronics, Shizuoka University, 3-5-1 Johoku, Hamamatsu 432-8011, Japan
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Temmyo Jiro
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
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Aoki Toru
Reseach Institute of Electronics, Shizuoka University, Hamamatsu 432-8011 Japan
著作論文
- Doping and characterization for ZnO:N films grown by radical induced remote plasma metaloganic chemical vapor deposition
- Nonpolar $(11\bar{2}0)$ p-Type Nitrogen-Doped ZnO by Remote-Plasma-Enhanced Metalorganic Chemical Vapor Deposition