Sunohara Tsuyoshi | Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan
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- Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japanの論文著者
Institute of Applied Physics, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan | 論文
- Homogeneity Improvements in the Dielectric Characteristics of HfSiON Films by Nitridation
- Local Bonding Structure of High-Stress Silicon Nitride Film Modified by UV Curing for Strained Silicon Technology beyond 45 nm Node SoC Devices
- Analyses of Threshold Voltage Shift on Hole Injection in HfSiOx Films
- Orientational Stability of Azobenzene-Containing Materials in Polarization Recording
- Numerical Analysis of Photoinduced Chirality in Azobenzene Polymer and Its Application as Photoaddressable Polarization Altering Elements