NISHI Yoshifumi | Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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概要
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation | 論文
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport(Session 4A : Channel Engineering)
- Experimental Study of Uniaxial Stress Effects on Coulomb-limited Electron and Hole Mobility in Si-MOSFETs
- Examination of Performance Improvement in Dopant Segregated Schottky MOSFETs ; Short Channel Effects, Carrier Velocity and Parasitic Resistance
- Novel Fabrication Technique for Relaxed SiGe-on-Insulator Substrates without Thick SiGe Buffer Structures