Kinouchi Yohsuke | Department of Electrical and Electronic Engineering, University of Tokushima
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Department of Electrical and Electronic Engineering, University of Tokushima | 論文
- Influence of Pyramidal Defects on Photoluminescence of Mg-doped AlGaN/GaN Superlattice Structures
- Photoluminescence Study on InGaN/GaN Quantum Well Structure Grown on (112^^-0) Sapphire Substrate
- High-Performance 348 nm AlGaN/GaN-Based Ultraviolet-Light-Emitting Diode with a SiN Buffer Layer
- V-Shaped Defects in AlGaN/GaN Superlattices Grown on Thin Undoped-GaN Layers on Sapphire Substrate : Surfaces, interfaces, and Films
- Influence of Inversion Domains on Formation of V-Shaped Pits in GaN Films : Surfaces, Interfaces, and Films