Samudra Ganesh | Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore
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- Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singaporeの論文著者
Silicon Nano Device Laboratory, Department of Electrical and Computer Engineering, National University of Singapore, 117576 Singapore | 論文
- Novel Extended-Pi Shaped Silicon–Germanium Source/Drain Stressors for Strain and Performance Enhancement in p-Channel Tri-Gate Fin-Type Field-Effect Transistor
- Effectiveness of Aluminum Incorporation in Nickel Silicide and Nickel Germanide Metal Gates for Work Function Reduction
- Sub-30 nm Strained p-Channel Fin-Type Field-Effect Transistors with Condensed SiGe Source/Drain Stressors