Hamamatsu Akihito | Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University
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概要
- 同名の論文著者
- Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido Universityの論文著者
Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University | 論文
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
- Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures
- Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy