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Research Center for Interface Quantum Electronics and Graduate School of Electronics and Information Engineering, Hokkaido University | 論文
- Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates
- Dominant Electron Trap with Metastable State in Molecular Beam Epitaxial GaAs Grown at Low Temperatures
- Metastable Properties of the Dominant Electron Trap in Low-Temperature GaAs Grown by Molecular Beam Epitaxy