Chan Lap | Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576
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- Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576の論文著者
Silicon Nano Device Lab, Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 | 論文
- Device Physics and Performance Optimization of Impact-Ionization Metal–Oxide–Semiconductor Transistors formed using a Double-Spacer Fabrication Process
- Strain Relaxed High Quality Silicon–Germanium-on-Insulator Substrates Formed by Pulsed Laser Irradiation Technology
- Silicon Strain-Transfer-Layer (STL) and Graded Source/Drain Stressors for Enhancing the Performance of Silicon-Germanium Channel P-MOSFETs
- A Double-Gate Tunneling Field-Effect Transistor with Silicon-Germanium Source for High-Performance, Low Standby Power, and Low Power Technology Applications
- Pulsed Laser Irradiation of Silicon-Germanium-on-Insulator (Si_Ge_OI) Substrates for Strain Relaxation and Defect Reduction