Kim Jin | Dept. of EECS, Korea Advanced Institute of Science and Technology
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概要
Dept. of EECS, Korea Advanced Institute of Science and Technology | 論文
- Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)
- Investigation of Gate Misalignment Effects in FinFETs(Session 7A Silicon Devices IV,AWAD2006)
- Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate(Si Devices and Processes,Fundamental and Application of Advanced Semiconductor Devices)
- Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Novel Structures for 2-Bit Per Cell of NVM Using Asymmetric Double Gate (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))