Pritchard Robin | Department of Chemistry, University of Umist
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概要
論文 | ランダム
- AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer(Session1: Compound Semiconductor Devices)
- Demonstration of AlGaN/GaN high electron mobility transistors on a-plane (1120) sapphire
- Low-dark-current high-performance AlGaN solar-blind p-i-n photodiodes
- Reduced gate leakage for AlGaN/GaN HEMTs grown on a-plane (1120) sapphire
- ニューキノロン系抗菌薬と青汁との相互作用