Asobe Masaki | NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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- NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japanの論文著者
NTT Photonics Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan | 論文
- High-Speed Uni-Traveling-Carrier Photodiodes Monolithically Integrated with InP Heterojunction Bipolar Transistors using Be Ion Implantation
- 0.25-μm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure
- High-Performance Composite-Collector InP/InGaAs Heterojunction Bipolar Transistors
- InP-Based Planar-Antenna-Integrated Schottky-Barrier Diode for Millimeter- and Sub-Millimeter-Wave Detection
- InP/InGaAs Heterojunction Phototransistor Operating at Wavelengths above 2 μm Realized Using Strained InAs/InGaAs Multiquantum Well Absorption Layer