Kajiyama Hiroshi | Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan
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- Kajiyama Hiroshiの詳細を見る
- 同名の論文著者
- Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japanの論文著者
Department of Semiconductor Electronics and Integration Science, Graduate School of Advanced Sciences of Matter, Hiroshima University, 1-3-1 Kagamiyama, Higashihiroshima, Hiroshima 739-8530, Japan | 論文
- Quantum Chemistry Study of Surface Structure Effects on Secondary Electron Emission in MgO Protecting Layers for Plasma Displays
- Novel Method Based on Quantum Chemistry for Calculation of Ion Induced Secondary Electron Emission Coefficient of MgO Surfaces
- Light-Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in Metal–Oxide–Semiconductor Structures
- Native Oxidation Growth on Ge(111) and (100) Surfaces
- Formation of Cobalt and Cobalt-Silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma